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TO-236AB
Discrete Semiconductor Products

PMV50EPEAR

Active
Freescale Semiconductor - NXP

TRANS MOSFET P-CH 30V 4.2A 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheetLFPAK MOSFET thermal design guide - Part 2+9
TO-236AB
Discrete Semiconductor Products

PMV50EPEAR

Active
Freescale Semiconductor - NXP

TRANS MOSFET P-CH 30V 4.2A 3-PIN SOT-23 T/R AUTOMOTIVE AEC-Q101

Deep-Dive with AI

DocumentsDatasheetLFPAK MOSFET thermal design guide - Part 2+9

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV50EPEAR
Current - Continuous Drain (Id) @ 25°C4.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]19.2 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds793 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)455 mW, 310 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs45 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.55
10$ 0.34
100$ 0.22
500$ 0.16
1000$ 0.14
Digi-Reel® 1$ 0.55
10$ 0.34
100$ 0.22
500$ 0.16
1000$ 0.14
Tape & Reel (TR) 3000$ 0.12
6000$ 0.11
9000$ 0.11
15000$ 0.10
21000$ 0.10
30000$ 0.09
75000$ 0.09

Description

General part information

PMV50EPEA Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.