Catalog
30 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Vgs (Max) | Package / Case | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Grade | Mounting Type | Qualification | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | 30 V | 4.5 V 10 V | 3 V | 310 mW 455 mW | 45 mOhm | TO-236AB | 20 V | SC-59 SOT-23-3 TO-236-3 | P-Channel | 19.2 nC | -55 °C | 150 °C | Automotive | Surface Mount | AEC-Q101 | 4.2 A | 793 pF | MOSFET (Metal Oxide) |