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SOT1215
Discrete Semiconductor Products

PBSS4160QA-QZ

Active
Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT TRANSISTOR

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Search across all available documentation for this part.

Documentsplastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm bodyplastic, thermal enhanced ultra thin small outline package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body+6
SOT1215
Discrete Semiconductor Products

PBSS4160QA-QZ

Active
Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT TRANSISTOR

Deep-Dive with AI

Documentsplastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm bodyplastic, thermal enhanced ultra thin small outline package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body+6

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160QA-QZ
Current - Collector (Ic) (Max) [Max]1 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]230
Frequency - Transition180 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case3-XDFN Exposed Pad
Power - Max [Max]325 mW
QualificationAEC-Q101
Supplier Device PackageDFN1010D-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic235 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.12
Tape & Reel (TR) 5000$ 0.10
10000$ 0.09
15000$ 0.09
25000$ 0.08
35000$ 0.08
50000$ 0.08
125000$ 0.07

Description

General part information

PBSS4160QA-Q Series

NPN low VCEsattransistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.