Catalog
60 V, 1 A NPN low VCEsat transistor
Description
AI
NPN low VCEsattransistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.
Beta
⌘K
60 V, 1 A NPN low VCEsat transistor
60 V, 1 A NPN low VCEsat transistor
| Part | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Qualification | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Transistor Type | Operating Temperature | Current - Collector (Ic) (Max) [Max] | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Package / Case | Vce Saturation (Max) @ Ib, Ic | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | DFN1010D-3 | 60 V | AEC-Q101 | 230 | Surface Mount | NPN | 150 °C | 1 A | 180 MHz | 100 nA | 325 mW | 3-XDFN Exposed Pad | 235 mV | Automotive |