Discrete Semiconductor Products
STH240N10F7-2
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.002 OHM TYP., 180 A STRIPFET F7 POWER MOSFET IN A H2PAK-2 PACKAGE
Discrete Semiconductor Products
STH240N10F7-2
ActiveSTMicroelectronics
N-CHANNEL 100 V, 0.002 OHM TYP., 180 A STRIPFET F7 POWER MOSFET IN A H2PAK-2 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STH240N10F7-2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 11550 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 300 W |
| Rds On (Max) @ Id, Vgs | 2.5 mOhm |
| Supplier Device Package | H2Pak-2 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
STH240 Series
N-channel 100 V, 0.002 Ohm typ., 180 A STripFET F7 Power MOSFET in a H2PAK-6 package
| Part | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Max] | Operating Temperature [Min] | Power Dissipation (Max) | Vgs (Max) | FET Type | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | 160 nC | 10 V | 175 °C | -55 °C | 300 W | 20 V | N-Channel | H2PAK-6 | 4.5 V | 11550 pF | D2PAK (6 Leads + Tab) TO-263-7 | 2.5 mOhm | Surface Mount | MOSFET (Metal Oxide) | 100 V | 180 A |
STMicroelectronics | 160 nC | 10 V | 175 °C | -55 °C | 300 W | 20 V | N-Channel | H2Pak-2 | 4.5 V | 11550 pF | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 2.5 mOhm | Surface Mount | MOSFET (Metal Oxide) | 100 V | 180 A |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STH240 Series
These N-channel Power MOSFETs utilize the STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Documents
Technical documentation and resources