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Discrete Semiconductor Products

RGTH50TK65DGC11

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Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 25A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

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Search across all available documentation for this part.

Documents4 Steps for Successful Thermal Designing of Power Devices What Is Thermal Design +33

Product dimension image

Discrete Semiconductor Products

RGTH50TK65DGC11

Active

Rohm Semiconductor

HIGH-SPEED SWITCHING TYPE, 650V 25A, FRD BUILT-IN, TO-3PFM, FIELD STOP TRENCH IGBT

Deep-Dive with AI

Documents4 Steps for Successful Thermal Designing of Power Devices What Is Thermal Design +33

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RGTH50TK65DGC11

Current - Collector (Ic) (Max) [Max]	26 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	49 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-3PFM, SC-93-3
Power - Max [Max]	59 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-3PFM
Td (on/off) @ 25°C [custom]	27 ns
Td (on/off) @ 25°C [custom]	94 ns
Test Condition	400 V, 25 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.85
		10	$ 3.27
		100	$ 2.79
Newark	Each	1	$ 5.45
		10	$ 4.76
		25	$ 3.27
		50	$ 3.15
		100	$ 3.03
		250	$ 2.96
		900	$ 2.90

Description

General part information

RGTH50TK65D Series

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Documents

Technical documentation and resources

4 Steps for Successful Thermal Designing of Power Devices

What Is Thermal Design

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Judgment Criteria of Thermal Evaluation

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Taping Information

Package Information

About Flammability of Materials

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

PCB Layout Thermal Design Guide

Precautions for Thermal Resistance of Insulation Sheet

Moisture Sensitivity Level

Package Information

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

How to Create Symbols for PSpice Models

RGTH50TK65D Data Sheet

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Reliability Test Result

Manufacturing Data

Package Dimensions

Package Information

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Explanation for Marking

Package Information

Types and Features of Transistors

Application Note

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

About Export Administration Regulations (EAR)

Export Information

Two-Resistor Model for Thermal Simulation

Compliance of the ELV directive

Environmental Data

Measurement Method and Usage of Thermal Resistance RthJC

Inner Structure

Package Information

Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules

Anti-Whisker formation

Package Information

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Technical Data Sheet EN

RGTH50TK65D Series

High-Speed Switching Type, 650V 25A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Test Condition	Supplier Device Package	Reverse Recovery Time (trr)	IGBT Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Gate Charge	Package / Case	Current - Collector (Ic) (Max)
Rohm Semiconductor RGTH50TK65DGC11	650 V	-40 C	175 °C	Through Hole	27 ns	94 ns	10 Ohm 15 V 25 A 400 V	TO-3PFM	58 ns	Trench Field Stop	59 W	26 A	2.1 V	100 A	49 nC	SC-93-3 TO-3PFM
Rohm Semiconductor RGTH50TS65DGC11	650 V	-40 C	175 °C	Through Hole	27 ns	94 ns	10 Ohm 15 V 25 A 400 V	TO-247N	58 ns	Trench Field Stop	174 W		2.1 V	100 A	49 nC	TO-247-3	50 A
Rohm Semiconductor RGTH50TS65GC13	650 V	-40 C	175 °C	Through Hole	27 ns	94 ns	10 Ohm 15 V 25 A 400 V	TO-247G		Trench Field Stop	174 W		2.1 V	100 A	49 nC	TO-247-3	50 A