Discrete Semiconductor Products

RGTH50TS65DGC11

NRND

IGBT, SINGLE, 650V, 50A, TO-247N-3

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

IGBT, SINGLE, 650V, 50A, TO-247N-3

Technical Specifications

Parameters and characteristics for this part

Specification	RGTH50TS65DGC11

Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	100 A
Gate Charge	49 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	174 W
Reverse Recovery Time (trr)	58 ns
Supplier Device Package	TO-247N
Td (on/off) @ 25°C [custom]	27 ns
Td (on/off) @ 25°C [custom]	94 ns
Test Condition	400 V, 25 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.1 V
Voltage - Collector Emitter Breakdown (Max)	650 V

High-Speed Switching Type, 650V 25A, FRD Built-in, TO-3PFM, Field Stop Trench IGBT

Part	Voltage - Collector Emitter Breakdown (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Test Condition	Supplier Device Package	Reverse Recovery Time (trr)	IGBT Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Gate Charge	Package / Case	Current - Collector (Ic) (Max)
Rohm Semiconductor RGTH50TK65DGC11	650 V	-40 C	175 °C	Through Hole	27 ns	94 ns	10 Ohm 15 V 25 A 400 V	TO-3PFM	58 ns	Trench Field Stop	59 W	26 A	2.1 V	100 A	49 nC	SC-93-3 TO-3PFM
Rohm Semiconductor RGTH50TS65DGC11	650 V	-40 C	175 °C	Through Hole	27 ns	94 ns	10 Ohm 15 V 25 A 400 V	TO-247N	58 ns	Trench Field Stop	174 W		2.1 V	100 A	49 nC	TO-247-3	50 A
Rohm Semiconductor RGTH50TS65GC13	650 V	-40 C	175 °C	Through Hole	27 ns	94 ns	10 Ohm 15 V 25 A 400 V	TO-247G		Trench Field Stop	174 W		2.1 V	100 A	49 nC	TO-247-3	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

Technical documentation and resources