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Diode TVS Dual Common Anode Uni-Dir 3V 24W 3-Pin SOT-23 Emboss T/R
Discrete Semiconductor Products

NVR5124PLT1G

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 1.1 A, 0.183 OHM, SOT-23, SURFACE MOUNT

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Diode TVS Dual Common Anode Uni-Dir 3V 24W 3-Pin SOT-23 Emboss T/R
Discrete Semiconductor Products

NVR5124PLT1G

Active
ON Semiconductor

POWER MOSFET, P CHANNEL, 60 V, 1.1 A, 0.183 OHM, SOT-23, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationNVR5124PLT1G
Current - Continuous Drain (Id) @ 25°C1.1 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]4.3 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds240 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]470 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs230 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.73
10$ 0.45
100$ 0.29
500$ 0.22
1000$ 0.20
Digi-Reel® 1$ 0.73
10$ 0.45
100$ 0.29
500$ 0.22
1000$ 0.20
Tape & Reel (TR) 3000$ 0.17
6000$ 0.16
9000$ 0.15
15000$ 0.14
21000$ 0.14
30000$ 0.13
75000$ 0.13
NewarkEach (Supplied on Cut Tape) 1$ 0.54
10$ 0.46
25$ 0.42
50$ 0.38
100$ 0.34
250$ 0.31
500$ 0.28
1000$ 0.25
ON SemiconductorN/A 1$ 0.18

Description

General part information

NVR5124PL Series

Automotive Power MOSFET. -60 V, 230 mOhm, Single P-Channel Logic Level, SOT-23. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. .