Single P−Channel Power MOSFET −60V, −1.1A, 230mΩ
Single P−Channel Power MOSFET −60V, −1.1A, 230mΩ
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Technology | Qualification | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Grade | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Supplier Device Package | Package / Case | FET Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 4.3 nC | 60 V | 230 mOhm | MOSFET (Metal Oxide) | AEC-Q101 | 4.5 V 10 V | Surface Mount | 240 pF | Automotive | 1.1 A | -55 °C | 150 °C | 20 V | SOT-23-3 (TO-236) | SC-59 SOT-23-3 TO-236-3 | P-Channel | 2.5 V | 470 mW |