Discrete Semiconductor Products

STB41N40DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 400 V, 50 MOHM TYP., 41 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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Discrete Semiconductor Products

STB41N40DM6AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 400 V, 50 MOHM TYP., 41 A MDMESH DM6 POWER MOSFET IN A D2PAK PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STB41N40DM6AG

Current - Continuous Drain (Id) @ 25°C	41 A
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	2310 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	250 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STB41N40DM6AG Series

Automotive-grade N-channel 400 V, 50 mOhm typ., 41 A MDmesh DM6 Power MOSFET in a D2PAK package

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Grade	Gate Charge (Qg) (Max) @ Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Qualification	FET Type
STMicroelectronics STB41N40DM6AG	TO-263 (D2PAK)	41 A	2310 pF	250 W	150 °C	-55 °C	25 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	65 mOhm	Automotive	53 nC	MOSFET (Metal Oxide)	10 V	400 V	5 V	AEC-Q101	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	985	$ 6.68
Mouser	N/A	1	$ 6.41
		10	$ 5.22
		100	$ 4.35
		500	$ 3.84
		1000	$ 3.46
Newark	Each (Supplied on Cut Tape)	1	$ 9.24
		10	$ 6.81
		25	$ 6.35
		50	$ 5.89
		100	$ 5.43
		250	$ 5.15
		500	$ 4.86

Description

General part information

STB41N40DM6AG Series

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources