Discrete Semiconductor Products

SIS407ADN-T1-GE3

Active

MOSFET P-CH 20V 18A PPAK1212-8

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET P-CH 20V 18A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIS407ADN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	168 nC
Input Capacitance (Ciss) (Max) @ Vds	5875 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs	9 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SIS407DN-T1-GE3	-55 °C	150 °C	25 A	93.8 nC	P-Channel	3.6 W 33 W	Surface Mount	8 V	PowerPAK® 1212-8	2760 pF	1.8 V 4.5 V	20 V	PowerPAK® 1212-8	1 V	MOSFET (Metal Oxide)	9.5 mOhm
Vishay General Semiconductor - Diodes Division SIS407ADN-T1-GE3	-55 °C	150 °C	18 A		P-Channel		Surface Mount	8 V	PowerPAK® 1212-8		1.8 V 4.5 V	20 V	PowerPAK® 1212-8	1 V	MOSFET (Metal Oxide)	9 mOhm	5875 pF	168 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 18A (Tc) 3.7W (Ta), 39.1W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources