SIS407 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET P-CH 20V 25A PPAK1212-8
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Package / Case | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 25 A | 93.8 nC | P-Channel | 3.6 W 33 W | Surface Mount | 8 V | PowerPAK® 1212-8 | 2760 pF | 1.8 V 4.5 V | 20 V | PowerPAK® 1212-8 | 1 V | MOSFET (Metal Oxide) | 9.5 mOhm | ||
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | 18 A | P-Channel | Surface Mount | 8 V | PowerPAK® 1212-8 | 1.8 V 4.5 V | 20 V | PowerPAK® 1212-8 | 1 V | MOSFET (Metal Oxide) | 9 mOhm | 5875 pF | 168 nC |