Discrete Semiconductor Products

QJD1210SB1

Unknown

SIC 1200V 10A MOD

Search across all available documentation for this part.

Discrete Semiconductor Products

Unknown

SIC 1200V 10A MOD

Technical Specifications

Parameters and characteristics for this part

Specification	QJD1210SB1

Technology	Silicon Carbide (SiC)

Part	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds
Powerex Inc. QJD1210SB1	Silicon Carbide (SiC)
Powerex Inc. QJD1210SA1	Silicon Carbide (SiC)	1.2 kV	1200 V	100 A	17 mOhm	8200 pF	Chassis Mount	Module	330 nC	1.6 V	2 N-Channel (Dual)	Module	-40 °C	150 °C	520 W
Powerex Inc. QJD1210010	Silicon Carbide (SiC)	1.2 kV	1200 V	100 A	25 mOhm		Chassis Mount	Module	500 nC	5 V	2 N-Channel (Dual)	Module	-40 °C	175 °C	1080 W	10200 pF
Powerex Inc. QJD1210SA2	Silicon Carbide (SiC)	1.2 kV	1200 V	100 A	17 mOhm	8200 pF	Chassis Mount	Module	330 nC	1.6 V	2 N-Channel (Dual)	Module	-40 °C	150 °C	415 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array

Technical documentation and resources

No documents available