Specification	QJD1210010

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	1.2 kV
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs [Max]	500 nC
Input Capacitance (Ciss) (Max) @ Vds	10200 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	1080 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	5 V

QJD1210 Series

Part	Technology	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Configuration	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds
Powerex Inc. QJD1210SB1	Silicon Carbide (SiC)
Powerex Inc. QJD1210SA1	Silicon Carbide (SiC)	1.2 kV	1200 V	100 A	17 mOhm	8200 pF	Chassis Mount	Module	330 nC	1.6 V	2 N-Channel (Dual)	Module	-40 °C	150 °C	520 W
Powerex Inc. QJD1210010	Silicon Carbide (SiC)	1.2 kV	1200 V	100 A	25 mOhm		Chassis Mount	Module	500 nC	5 V	2 N-Channel (Dual)	Module	-40 °C	175 °C	1080 W	10200 pF
Powerex Inc. QJD1210SA2	Silicon Carbide (SiC)	1.2 kV	1200 V	100 A	17 mOhm	8200 pF	Chassis Mount	Module	330 nC	1.6 V	2 N-Channel (Dual)	Module	-40 °C	150 °C	415 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 100A (Tc) 1080W Chassis Mount Module

Technical documentation and resources