APTGLQ75H120TG

Active

INSULATED GATE BIPOLAR TRANSISTOR, 130A I(C), 1200V V(BR)CES, N-CHANNEL

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

INSULATED GATE BIPOLAR TRANSISTOR, 130A I(C), 1200V V(BR)CES, N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	APTGLQ75H120TG

Configuration	Full Bridge
Current - Collector (Ic) (Max) [Max]	130 A
Current - Collector Cutoff (Max) [Max]	50 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	4.4 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	Module
Power - Max [Max]	385 W
Supplier Device Package	SP4
Vce(on) (Max) @ Vge, Ic	2.4 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

1200V/Full bridge/IGBT modules

Part	Current - Collector Cutoff (Max) [Max]	Package / Case	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	IGBT Type	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector (Ic) (Max) [Max]	Input	Voltage - Collector Emitter Breakdown (Max) [Max]	Input Capacitance (Cies) @ Vce	Mounting Type	NTC Thermistor	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)
Microchip Technology APTGLQ75H120TG	50 µA	Module	385 W	2.4 V	Trench Field Stop	Full Bridge	-40 C	175 °C	130 A	Standard	1200 V	4.4 nF	Chassis Mount		SP4
Microchip Technology APTGLQ75H65T1G		SP1	250 W	2.3 V	Trench Field Stop	Full Bridge	-40 C	175 °C	150 A	Standard		4.62 nF	Through Hole		SP1	650 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

* IGBT 4 fast

* Low voltage drop

* Low tail current

Technical documentation and resources