Discrete Semiconductor Products

IRFZ10

Obsolete

MOSFET N-CH 60V 10A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 60V 10A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRFZ10

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	300 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	43 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology
Vishay General Semiconductor - Diodes Division IRFZ10	43 W	TO-220-3	-55 °C	175 ░C	60 V	Through Hole	20 V	300 pF	TO-220AB	N-Channel	200 mOhm	10 V	4 V	11 nC	10 A	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 10A (Tc) 43W (Tc) Through Hole TO-220AB

Technical documentation and resources