IRFZ10 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 10A TO220AB
| Part | Power Dissipation (Max) | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 43 W | TO-220-3 | -55 °C | 175 ░C | 60 V | Through Hole | 20 V | 300 pF | TO-220AB | N-Channel | 200 mOhm | 10 V | 4 V | 11 nC | 10 A | MOSFET (Metal Oxide) |