Discrete Semiconductor Products

UPA2650T1E-E2-AT

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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Discrete Semiconductor Products

Obsolete

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Technical Specifications

Parameters and characteristics for this part

Specification	UPA2650T1E-E2-AT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	2.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	220 pF
Mounting Type	Surface Mount
Package / Case	6-VDFN Exposed Pad
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	65 mOhm
Supplier Device Package	6-MLP (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

N-Channel Mos Field Effect Transistor For Switching

Part	Supplier Device Package	FET Feature	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Configuration	Power - Max [Max]
Renesas Electronics Corporation UPA2650T1E-E2-AT	6-MLP (3x3)	Logic Level Gate	MOSFET (Metal Oxide)	6-VDFN Exposed Pad	2.9 nC	220 pF	65 mOhm	2 V	Surface Mount	3.8 A	20 V	2 N-Channel (Dual)	1.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	270000	$ 0.79

General part information

The UPA2650T1E is a N-Channel Mos Field Effect Transistor For Switching.

Technical documentation and resources