N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
N-Channel Mos Field Effect Transistor For Switching
| Part | Supplier Device Package | FET Feature | Technology | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Configuration | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 6-MLP (3x3) | Logic Level Gate | MOSFET (Metal Oxide) | 6-VDFN Exposed Pad | 2.9 nC | 220 pF | 65 mOhm | 2 V | Surface Mount | 3.8 A | 20 V | 2 N-Channel (Dual) | 1.1 W |