Discrete Semiconductor Products

HGTP12N60C3

Obsolete

ON Semiconductor

IGBT 600V 24A 104W TO220AB

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Discrete Semiconductor Products

HGTP12N60C3

Obsolete

ON Semiconductor

IGBT 600V 24A 104W TO220AB

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	HGTP12N60C3

Current - Collector (Ic) (Max) [Max]	24 A
Current - Collector Pulsed (Icm)	96 A
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3
Power - Max [Max]	104 W
Supplier Device Package	TO-220-3
Switching Energy	900 µJ, 380 µJ
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

HGTP12N60A4D Series

600V, SMPS IGBT

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Switching Energy	Test Condition	Mounting Type	Current - Collector (Ic) (Max)	Td (on/off) @ 25°C	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]
ON Semiconductor HGTP12N60A4	-55 °C	150 °C	167 W	96 A	2.7 V	50 µJ 55 µJ	10 Ohm 12 A 15 V 390 V	Through Hole	54 A	17 ns 96 ns	78 nC	600 V	TO-220-3	TO-220-3
ON Semiconductor HGTP12N60A4D	-55 °C	150 °C	167 W	96 A	2.7 V	50 µJ 55 µJ	10 Ohm 12 A 15 V 390 V	Through Hole	54 A	17 ns 96 ns	78 nC	600 V	TO-220-3	TO-220-3	30 ns
ON Semiconductor HGTP12N60A4D	-55 °C	150 °C	167 W	96 A	2.7 V	50 µJ 55 µJ	10 Ohm 12 A 15 V 390 V	Through Hole	54 A	17 ns 96 ns	78 nC	600 V	TO-220-3	TO-220-3	30 ns
ON Semiconductor HGTP12N60C3	-40 °C	150 °C	104 W	96 A	2 V	380 µJ 900 µJ		Through Hole				600 V	TO-220-3	TO-220-3		24 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

HGTP12N60A4D Series

The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

Documents

Technical documentation and resources