HGTP12N60A4D Series

600V, SMPS IGBT

Catalog

600V, SMPS IGBT

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Switching Energy	Test Condition	Mounting Type	Current - Collector (Ic) (Max)	Td (on/off) @ 25°C	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Current - Collector (Ic) (Max) [Max]
ON Semiconductor HGTP12N60A4	-55 °C	150 °C	167 W	96 A	2.7 V	50 µJ 55 µJ	10 Ohm 12 A 15 V 390 V	Through Hole	54 A	17 ns 96 ns	78 nC	600 V	TO-220-3	TO-220-3
ON Semiconductor HGTP12N60A4D	-55 °C	150 °C	167 W	96 A	2.7 V	50 µJ 55 µJ	10 Ohm 12 A 15 V 390 V	Through Hole	54 A	17 ns 96 ns	78 nC	600 V	TO-220-3	TO-220-3	30 ns
ON Semiconductor HGTP12N60A4D	-55 °C	150 °C	167 W	96 A	2.7 V	50 µJ 55 µJ	10 Ohm 12 A 15 V 390 V	Through Hole	54 A	17 ns 96 ns	78 nC	600 V	TO-220-3	TO-220-3	30 ns
ON Semiconductor HGTP12N60C3	-40 °C	150 °C	104 W	96 A	2 V	380 µJ 900 µJ		Through Hole				600 V	TO-220-3	TO-220-3		24 A

Catalog

600V, SMPS IGBT

Key Features

• 23A, 600V @ TC= 110°C

• Low Saturation Voltage : VCE(sat)= 2.0 V @ IC= 12A

• Typical Fall Time............70ns at TJ= 125°C

• Low Conduction Loss

Description

The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.