Discrete Semiconductor Products
JAN2N6341
ActiveMicrochip Technology
150V 25A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Discrete Semiconductor Products
JAN2N6341
ActiveMicrochip Technology
150V 25A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N6341 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 25 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 200 W |
| Qualification | MIL-PRF-19500/509 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.8 V |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 98.97 | |
| Microchip Direct | N/A | 1 | $ 106.58 | |
| Newark | Each | 100 | $ 98.97 | |
| 500 | $ 95.16 | |||
Description
General part information
JAN2N6341-Transistor Series
This specification covers the performance requirements for NPN silicon power, 2N6338 and 2N6341 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/509.
Documents
Technical documentation and resources