Discrete Semiconductor Products

STF18N60DM2

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STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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Discrete Semiconductor Products

STF18N60DM2

Active

STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH DM2 POWER MOSFET IN A TO-220FP PACKAGE

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF18N60DM2

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	295 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STF18 Series

N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP package

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STF18N60M2	25 W	791 pF	21.5 nC	TO-220FP	600 V	N-Channel	Through Hole	4 V	10 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)	150 °C	-55 °C	13 A	280 mOhm	25 V
STMicroelectronics STF18N65M5	25 W	1240 pF	31 nC	TO-220FP	650 V	N-Channel	Through Hole	5 V	10 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)			15 A	220 mOhm	25 V	150 °C
STMicroelectronics STF18NM60ND				TO-220FP	600 V	N-Channel	Through Hole	5 V	10 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)			13 A	290 mOhm	25 V	150 °C	34 nC	1030 pF
STMicroelectronics STF18N60DM2	25 W	800 pF		TO-220FP	600 V	N-Channel	Through Hole	5 V	10 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)	150 °C	-55 °C	13 A	295 mOhm	25 V		20 nC
STMicroelectronics STF18N65M2	25 W	770 pF		TO-220FP	650 V	N-Channel	Through Hole	4 V	10 V	TO-220-3 Full Pack	MOSFET (Metal Oxide)	150 °C	-55 °C	12 A	330 mOhm	25 V		20 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.04
	Tube	1000	$ 1.25

Description

General part information

STF18 Series

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Documents

Technical documentation and resources