Discrete Semiconductor Products

STP8NK100Z

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STMicroelectronics

N-CHANNEL 1000 V, 1.60 OHM TYP., 6.5 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE

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Discrete Semiconductor Products

STP8NK100Z

Active

STMicroelectronics

N-CHANNEL 1000 V, 1.60 OHM TYP., 6.5 A SUPERMESH POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheet +14

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP8NK100Z

Current - Continuous Drain (Id) @ 25°C	6.5 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	102 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2180 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	1.85 Ohm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STP8NK100Z Series

Part	Drain to Source Voltage (Vdss)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id	Technology
STMicroelectronics STP8NK100Z	1000 V	TO-220	10 V	Through Hole	6.5 A	2180 pF	150 °C	-55 °C	30 V	1.85 Ohm	N-Channel	102 nC	TO-220-3	4.5 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	57	$ 5.88
	Tube	1	$ 5.05
		50	$ 4.00
		100	$ 3.43
		500	$ 3.05
		1000	$ 2.61
		2000	$ 2.46
Newark	Each	1	$ 5.31
		10	$ 4.50
		100	$ 3.44
		500	$ 3.01
		1000	$ 2.93

Description

General part information

STP8NK100Z Series

The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.EXTREMELY HIGH dv/dt CAPABILITY100% AVALANCHE RATEDIMPROVED ESD CAPABILITYVERY LOW INTRINSIC CAPACITANCE