JAN2N5685
Active60V 50A 300W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
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JAN2N5685
Active60V 50A 300W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N5685 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Cutoff (Max) [Max] | 500 çA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 15 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 300 W |
| Qualification | MIL-PRF-19500/464 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 5 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 177.45 | |
| Microchip Direct | N/A | 1 | $ 191.10 | |
| Newark | Each | 100 | $ 177.45 | |
| 500 | $ 170.63 | |||
Description
General part information
JAN2N5685-Transistor Series
This specification covers the performance requirements for NPN silicon, power, 2N5685 and 2N5686 transistors, complimentary to 2N5864 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/464. The device package outlines are as follows: TO-3 for all encapsulated device types.
Documents
Technical documentation and resources
