STB6N60M2
ActiveN-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE
STB6N60M2
ActiveN-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN D2PAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STB6N60M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 8 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 232 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STB6N60M2 Series
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh technology: MDmesh II Plus low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.Extremely low gate chargeLower RDS(on)x area vs previous generationLow gate input resistance100% avalanche testedZener-protected
Documents
Technical documentation and resources