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TAIWAN SEMICONDUCTOR TSM2323CX RFG
Discrete Semiconductor Products

FDN304PZ

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, -2.4 A, -20 V, 0.036 OHM, -4.5 V, -800 MV ROHS COMPLIANT: YES

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TAIWAN SEMICONDUCTOR TSM2323CX RFG
Discrete Semiconductor Products

FDN304PZ

Active
ON Semiconductor

MOSFET TRANSISTOR, P CHANNEL, -2.4 A, -20 V, 0.036 OHM, -4.5 V, -800 MV ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDN304PZ
Current - Continuous Drain (Id) @ 25°C2.4 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]20 nC
Input Capacitance (Ciss) (Max) @ Vds1310 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]500 mW
Rds On (Max) @ Id, Vgs52 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.61
10$ 0.52
100$ 0.36
500$ 0.28
1000$ 0.23
Digi-Reel® 1$ 0.61
10$ 0.52
100$ 0.36
500$ 0.28
1000$ 0.23
Tape & Reel (TR) 3000$ 0.20
6000$ 0.19
9000$ 0.18
30000$ 0.18
NewarkEach (Supplied on Cut Tape) 1$ 0.92
10$ 0.57
25$ 0.50
50$ 0.44
100$ 0.37
250$ 0.33
500$ 0.28
1000$ 0.26
ON SemiconductorN/A 1$ 0.18

Description

General part information

FDN304PZ Series

This P-Channel 1.8V specified MOSFET uses an advanced low voltage PowerTrench process. It has been optimized for battery power management applications.