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TO-263AB
Discrete Semiconductor Products

IRF9510STRLPBF

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TO-263AB
Discrete Semiconductor Products

IRF9510STRLPBF

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF9510STRLPBF
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]8.7 nC
Input Capacitance (Ciss) (Max) @ Vds200 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)43 W, 3.7 W
Rds On (Max) @ Id, Vgs1.2 Ohm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.15
10$ 0.95
100$ 0.76
Digi-Reel® 1$ 1.15
10$ 0.95
100$ 0.76
Tape & Reel (TR) 800$ 0.69

Description

General part information

IRF9510 Series

P-Channel 100 V 4A (Tc) 3.7W (Ta), 43W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources