IRF9510 Series

Catalog

MOSFET P-CH 100V 4A D2PAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division IRF9510STRR	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	10 V	4 V	1.2 Ohm	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 pF	4 A	TO-263 (D2PAK)	8.7 nC	Surface Mount	P-Channel	100 V
Vishay General Semiconductor - Diodes Division IRF9510SPBF	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	10 V	4 V	1.2 Ohm	43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 pF	4 A		8.7 nC	Surface Mount	P-Channel	100 V
Vishay General Semiconductor - Diodes Division IRF9510STRLPBF	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	10 V	4 V	1.2 Ohm	3.7 W 43 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 pF	4 A	TO-263 (D2PAK)	8.7 nC	Surface Mount	P-Channel	100 V
Vishay General Semiconductor - Diodes Division IRF9510	-55 °C	175 ░C	20 V	MOSFET (Metal Oxide)	10 V	4 V	1.2 Ohm	43 W	TO-220-3	200 pF	4 A	TO-220AB	8.7 nC	Through Hole	P-Channel	100 V