Specification	FDMC7200

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A, 6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	10 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	660 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power - Max [Max]	900 mW
Power - Max [Min]	700 mW
Rds On (Max) @ Id, Vgs	23.5 mOhm
Supplier Device Package	8-Power33 (3x3)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDMC7200 Series

Dual N-Channel PowerTrench® MOSFET 30V, 12mΩ and 23.5mΩ

Part	Package / Case	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Min]	Power - Max [Max]	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Configuration
ON Semiconductor FDMC7200	8-PowerWDFN	Logic Level Gate	660 pF	30 V	3 V	23.5 mOhm	6 A 8 A	MOSFET (Metal Oxide)	-55 °C	150 °C	700 mW	900 mW	8-Power33 (3x3)	Surface Mount	10 nC	2 N-Channel (Dual)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.04
		10	$ 0.65
		100	$ 0.43
		500	$ 0.33
		1000	$ 0.30
	Digi-Reel®	1	$ 1.04
		10	$ 0.65
		100	$ 0.43
		500	$ 0.33
		1000	$ 0.30
	Tape & Reel (TR)	3000	$ 0.26
		6000	$ 0.24
		9000	$ 0.23
		15000	$ 0.22
Newark	Each (Supplied on Full Reel)	3000	$ 0.30
		6000	$ 0.27
		12000	$ 0.26
		18000	$ 0.24
		30000	$ 0.23
ON Semiconductor	N/A	1	$ 0.24

Description

General part information

FDMC7200 Series

This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.