FDMC7200 Series

Dual N-Channel PowerTrench® MOSFET 30V, 12mΩ and 23.5mΩ

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 12mΩ and 23.5mΩ

Part	Package / Case	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Min]	Power - Max [Max]	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Configuration
ON Semiconductor FDMC7200	8-PowerWDFN	Logic Level Gate	660 pF	30 V	3 V	23.5 mOhm	6 A 8 A	MOSFET (Metal Oxide)	-55 °C	150 °C	700 mW	900 mW	8-Power33 (3x3)	Surface Mount	10 nC	2 N-Channel (Dual)

Catalog

Dual N-Channel PowerTrench® MOSFET 30V, 12mΩ and 23.5mΩ

Key Features

• Q1: N-ChannelMax rDS(on)= 23.5 mΩ at VGS= 10 V, ID= 6 AMax rDS(on)= 38 mΩ at VGS= 4.5 V, ID= 5 A

• Q2: N-ChannelMax rDS(on)= 12 mΩ at VGS= 10 V, ID= 8 AMax rDS(on)= 18 mΩ at VGS= 4.5 V, ID= 7 A

• RoHS Compliant

Description

This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous MOSFET (Q2) have been designed to provide optimal power efficiency.