Specification	2SC2712-BL,LF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Mounting Type	Surface Mount
Operating Temperature	125 ¯C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	150 mW
Supplier Device Package	S-Mini
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

2SC2712 Series

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce
Toshiba Semiconductor and Storage 2SC2712-BL,LXHF	350	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	150 mA
Toshiba Semiconductor and Storage 2SC2712-GR,LF	70	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	150 mA	125 ¯C
Toshiba Semiconductor and Storage 2SC2712-BL,LF	70	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	150 mA	125 ¯C
Toshiba Semiconductor and Storage 2SC2712-Y,LF	120	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	150 mA	125 ¯C
Toshiba Semiconductor and Storage 2SC2712-Y,LXHF	120	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	150 mA
Toshiba Semiconductor and Storage 2SC2712-GR,LXHF		SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	150 mA		200 hFE

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 50 V 150 mA 80MHz 150 mW Surface Mount S-Mini

Technical documentation and resources