Specification	2SC2712-Y,LXHF

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Mounting Type	Surface Mount
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	200 mW
Supplier Device Package	S-Mini
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

2SC2712 Series

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce
Toshiba Semiconductor and Storage 2SC2712-BL,LXHF	350	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	150 mA
Toshiba Semiconductor and Storage 2SC2712-GR,LF	70	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	150 mA	125 ¯C
Toshiba Semiconductor and Storage 2SC2712-BL,LF	70	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	150 mA	125 ¯C
Toshiba Semiconductor and Storage 2SC2712-Y,LF	120	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	150 mW	250 mV	100 nA	Surface Mount	150 mA	125 ¯C
Toshiba Semiconductor and Storage 2SC2712-Y,LXHF	120	SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	150 mA
Toshiba Semiconductor and Storage 2SC2712-GR,LXHF		SC-59 SOT-23-3 TO-236-3	S-Mini	50 V	NPN	200 mW	250 mV	100 nA	Surface Mount	150 mA		200 hFE