2N4029
Active80 V SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES
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2N4029
Active80 V SMALL-SIGNAL BJT TO-18 ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N4029 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 hFE |
| Mounting Type | Through Hole |
| Package / Case | TO-18-3 Metal Can, TO-206AA |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | TO-18 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 101 | $ 8.23 | |
| Microchip Direct | N/A | 1 | $ 8.86 | |
| Newark | Each | 100 | $ 8.23 | |
| 500 | $ 7.91 | |||
Description
General part information
2N4029-Transistor Series
This specification covers the performance requirements for PNP silicon, 2N4029 and 2N4033 transistors for use in high speed switching and driver applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/512 and two levels of product assurance (JANHC and JANKC) for each unencapsulated device type. Provisions for radiation hardness assurance (RHA), eight radiation levels is provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package for the encapsulated device types are as follows: TO-18, TO-39, and surface mount UA and UB. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/512.
Documents
Technical documentation and resources