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STMICROELECTRONICS STD10N60M2
Discrete Semiconductor Products

STD10NF30

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 300 V, 280 MOHM TYP., 10 A, STRIPFET II POWER MOSFET IN A DPAK PACKAGE

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DocumentsAN4250+16
STMICROELECTRONICS STD10N60M2
Discrete Semiconductor Products

STD10NF30

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 300 V, 280 MOHM TYP., 10 A, STRIPFET II POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsAN4250+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD10NF30
Current - Continuous Drain (Id) @ 25°C10 A
Drain to Source Voltage (Vdss)300 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]780 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)103 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs330 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 3038$ 1.73

Description

General part information

STD10NF30 Series

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.