Specification	PMT560ENEAX

Current - Continuous Drain (Id) @ 25°C	1.1 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.4 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	112 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	750 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	715 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.7 V

PMT560ENEA Series

100 V N-channel Trench MOSFET

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Qualification	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Grade	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)
Freescale Semiconductor - NXP PMT560ENEAX	SOT-223	2.7 V	112 pF	MOSFET (Metal Oxide)	AEC-Q101	-55 °C	150 °C	1.1 A	715 mOhm	4.4 nC	N-Channel	750 mW	Surface Mount	20 V	Automotive	TO-261-4 TO-261AA	100 V	4.5 V 10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.41
		10	$ 0.32
		100	$ 0.19
		500	$ 0.17
	Digi-Reel®	1	$ 0.41
		10	$ 0.32
		100	$ 0.19
		500	$ 0.17
	Tape & Reel (TR)	1000	$ 0.12
		2000	$ 0.11
		5000	$ 0.10
		10000	$ 0.09
		25000	$ 0.09
		50000	$ 0.09

Description

General part information

PMT560ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.