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100 V N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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100 V N-channel Trench MOSFET
100 V N-channel Trench MOSFET
| Part | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Qualification | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Type | Power Dissipation (Max) | Mounting Type | Vgs (Max) | Grade | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Freescale Semiconductor - NXP | SOT-223 | 2.7 V | 112 pF | MOSFET (Metal Oxide) | AEC-Q101 | -55 °C | 150 °C | 1.1 A | 715 mOhm | 4.4 nC | N-Channel | 750 mW | Surface Mount | 20 V | Automotive | TO-261-4 TO-261AA | 100 V | 4.5 V 10 V |