Integrated Circuits (ICs)

IS43LR32160B-6BLI

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ISSI, Integrated Silicon Solution Inc

DRAM CHIP MOBILE DDR SDRAM 512M-BIT 16M X 32 1.8V 90-PIN TFBGA

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Integrated Circuits (ICs)

Active

ISSI, Integrated Silicon Solution Inc

DRAM CHIP MOBILE DDR SDRAM 512M-BIT 16M X 32 1.8V 90-PIN TFBGA

Technical Specifications

Parameters and characteristics for this part

Part	Memory Size	Technology	Mounting Type	Supplier Device Package	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Write Cycle Time - Word, Page	Memory Type	Memory Format	Memory Organization	Clock Frequency
ISSI, Integrated Silicon Solution Inc IS43LR32160C-6BLI	64 MB	SDRAM - Mobile LPDDR	Surface Mount	90-TFBGA (8x13)	90-TFBGA	85 °C	-40 °C	5.5 ns	Parallel	1.95 V	1.7 V	12 ns	Volatile	DRAM	16M x 32	166 MHz
ISSI, Integrated Silicon Solution Inc IS43LR32160B-6BLI	64 MB	SDRAM - Mobile LPDDR	Surface Mount	90-TFBGA (8x13)	90-TFBGA	85 °C	-40 °C	5.5 ns	Parallel	1.95 V	1.7 V	12 ns	Volatile	DRAM	16M x 32	166 MHz
ISSI, Integrated Silicon Solution Inc IS43LR32160C-6BL-TR	64 MB	SDRAM - Mobile LPDDR	Surface Mount	90-TFBGA (8x13)	90-TFBGA	70 °C	0 °C	5.5 ns	Parallel	1.95 V	1.7 V	12 ns	Volatile	DRAM	16M x 32	166 MHz
ISSI, Integrated Silicon Solution Inc IS43LR32160C-6BL	64 MB	SDRAM - Mobile LPDDR	Surface Mount	90-TFBGA (8x13)	90-TFBGA	70 °C	0 °C	5.5 ns	Parallel	1.95 V	1.7 V	12 ns	Volatile	DRAM	16M x 32	166 MHz
ISSI, Integrated Silicon Solution Inc IS43LR32160C-6BLI-TR	64 MB	SDRAM - Mobile LPDDR	Surface Mount	90-TFBGA (8x13)	90-TFBGA	85 °C	-40 °C	5.5 ns	Parallel	1.95 V	1.7 V	12 ns	Volatile	DRAM	16M x 32	166 MHz

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General part information

JEDEC standard 1.8V power supply

VDD = 1.8V, VDDQ = 1.8V

Four internal banks for concurrent operation

Technical documentation and resources

No documents available