IS43LR32160 Series
Manufacturer: ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PAR 90TFBGA
| Part | Write Cycle Time - Word, Page | Voltage - Supply [Max] | Voltage - Supply [Min] | Access Time | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Memory Organization [custom] | Memory Organization | Memory Organization [custom] | Memory Size | Clock Frequency | Memory Type | Memory Interface | Package / Case | Mounting Type | Memory Format |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solution Inc | 12 ns | 1.95 V | 1.7 V | 5.5 ns | 90-TFBGA (8x13) | 0 °C | 70 °C | SDRAM - Mobile LPDDR | 16 M | 16M x 32 | 32 bit | 64 MB | 166 MHz | Volatile | Parallel | 90-TFBGA | Surface Mount | DRAM |
ISSI, Integrated Silicon Solution Inc | 12 ns | 1.95 V | 1.7 V | 5.5 ns | 90-TFBGA (8x13) | -40 ¯C | 85 C | SDRAM - Mobile LPDDR | 16 M | 16M x 32 | 32 bit | 64 MB | 166 MHz | Volatile | Parallel | 90-TFBGA | Surface Mount | DRAM |
ISSI, Integrated Silicon Solution Inc | 12 ns | 1.95 V | 1.7 V | 5.5 ns | 90-TFBGA (8x13) | -40 ¯C | 85 C | SDRAM - Mobile LPDDR | 16 M | 16M x 32 | 32 bit | 64 MB | 166 MHz | Volatile | Parallel | 90-TFBGA | Surface Mount | DRAM |
ISSI, Integrated Silicon Solution Inc | 12 ns | 1.95 V | 1.7 V | 5.5 ns | 90-TFBGA (8x13) | 0 °C | 70 °C | SDRAM - Mobile LPDDR | 16 M | 16M x 32 | 32 bit | 64 MB | 166 MHz | Volatile | Parallel | 90-TFBGA | Surface Mount | DRAM |
ISSI, Integrated Silicon Solution Inc | 12 ns | 1.95 V | 1.7 V | 5.5 ns | 90-TFBGA (8x13) | 0 °C | 70 °C | SDRAM - Mobile LPDDR | 16 M | 16M x 32 | 32 bit | 64 MB | 166 MHz | Volatile | Parallel | 90-TFBGA | Surface Mount | DRAM |
ISSI, Integrated Silicon Solution Inc | 12 ns | 1.95 V | 1.7 V | 5.5 ns | 90-TFBGA (8x13) | -40 ¯C | 85 C | SDRAM - Mobile LPDDR | 16 M | 16M x 32 | 32 bit | 64 MB | 166 MHz | Volatile | Parallel | 90-TFBGA | Surface Mount | DRAM |