Discrete Semiconductor Products
SIRA14BDP-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 21A/64A PPAK SO8
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Discrete Semiconductor Products
SIRA14BDP-T1-GE3
ActiveVishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 21A/64A PPAK SO8
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | SIRA14BDP-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 64 A, 21 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 917 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | PowerPAK® SO-8 |
| Power Dissipation (Max) | 3.7 W, 36 W |
| Rds On (Max) @ Id, Vgs | 5.38 mOhm |
| Supplier Device Package | PowerPAK® SO-8 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | -16 V, 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.49 | |
| 10 | $ 0.42 | |||
| 100 | $ 0.29 | |||
| 500 | $ 0.23 | |||
| 1000 | $ 0.19 | |||
| Digi-Reel® | 1 | $ 0.49 | ||
| 10 | $ 0.42 | |||
| 100 | $ 0.29 | |||
| 500 | $ 0.23 | |||
| 1000 | $ 0.19 | |||
| Tape & Reel (TR) | 3000 | $ 0.17 | ||
| 6000 | $ 0.16 | |||
| 9000 | $ 0.15 | |||
| 30000 | $ 0.14 | |||
Description
General part information
SIRA14 Series
N-Channel 30 V 21A (Ta), 64A (Tc) 3.7W (Ta), 36W (Tc) Surface Mount PowerPAK® SO-8
Documents
Technical documentation and resources