SIRA14 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 30V 58A PPAK SO-8
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Supplier Device Package | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 30 V | 58 A | -16 V 20 V | 4.5 V 10 V | 2.2 V | 3.6 W 31.2 W | PowerPAK® SO-8 | 29 nC | 1450 pF | MOSFET (Metal Oxide) | 5.1 mOhm | PowerPAK® SO-8 | N-Channel | -55 °C | 150 °C | Surface Mount | |
Vishay General Semiconductor - Diodes Division | 30 V | 21 A 64 A | -16 V 20 V | 4.5 V 10 V | 2.2 V | 3.7 W 36 W | PowerPAK® SO-8 | 917 pF | MOSFET (Metal Oxide) | 5.38 mOhm | PowerPAK® SO-8 | N-Channel | -55 °C | 150 °C | Surface Mount | 22 nC |