Specification	MBRD1035CTLG

Current - Average Rectified (Io) (per Diode)	5 A
Current - Reverse Leakage @ Vr	2 mA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Speed	200 mA, 500 ns
Supplier Device Package	DPAK
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	35 V
Voltage - Forward (Vf) (Max) @ If	470 mV

MBRD1035CTL Series

Schottky Power Rectifier, Switch-mode, 10 A, 35 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Diode Configuration	Current - Reverse Leakage @ Vr	Supplier Device Package	Speed	Current - Average Rectified (Io) (per Diode)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor MBRD1035CTLT4	35 V	Schottky	470 mV	Surface Mount	1 Pair Common Cathode	2 mA	DPAK	200 mA 500 ns	5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-55 °C
ON Semiconductor MBRD1035CTL	35 V	Schottky	470 mV	Surface Mount	1 Pair Common Cathode	2 mA	DPAK	200 mA 500 ns	5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-55 °C
ON Semiconductor MBRD1035CTLG	35 V	Schottky	470 mV	Surface Mount	1 Pair Common Cathode	2 mA	DPAK	200 mA 500 ns	5 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRD1035CTL Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.