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Technical Specifications
Parameters and characteristics for this part
| Specification | MBRD1035CTL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 5 A |
| Current - Reverse Leakage @ Vr | 2 mA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | DPAK |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 35 V |
| Voltage - Forward (Vf) (Max) @ If | 470 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MBRD1035CTL Series
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Documents
Technical documentation and resources