STB9NK60ZT4
ActiveN-CHANNEL 600 V, 0.85 OHM TYP., 7 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE
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STB9NK60ZT4
ActiveN-CHANNEL 600 V, 0.85 OHM TYP., 7 A ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB9NK60ZT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1110 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 950 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
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Description
General part information
STB9NK60Z Series
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH technology, achieved through optimization of ST's well established strip-based PowerMESH layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.Extremely high dv/dt capabilityImproved ESD capability100% avalanche testedGate charge minimizedVery low intrinsic capacitances
Documents
Technical documentation and resources