Discrete Semiconductor Products

PHPT61002NYCX

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TRANS NPN 100V 2A LFPAK56 PWRSO8

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Discrete Semiconductor Products

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TRANS NPN 100V 2A LFPAK56 PWRSO8

Technical Specifications

Parameters and characteristics for this part

Specification	PHPT61002NYCX

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Power - Max [Max]	1.25 W
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	75 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Package / Case	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Operating Temperature	Mounting Type	Vce Saturation (Max) @ Ib, Ic
Freescale Semiconductor - NXP PHPT61002NYCX	2 A	NPN	SC-100 SOT-669	LFPAK56 Power-SO8	100 nA	1.25 W	100	100 V	140 MHz	175 °C	Surface Mount	75 mV
Freescale Semiconductor - NXP PHPT61002NYCLHX	2 A	NPN	SC-100 SOT-669	LFPAK56 Power-SO8	50 µA	25 W	120	100 V	140 MHz	175 °C	Surface Mount	300 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 100 V 2 A 140MHz 1.25 W Surface Mount LFPAK56, Power-SO8

Technical documentation and resources