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LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PHPT61002NYCX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 2 A PNP HIGH POWER BIPOLAR TRANSISTOR

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Search across all available documentation for this part.

DocumentsDatasheetPHPT61002NYC Nexperia Product Reliability+7
LFPAK56/POWER-SO8/SOT669
Discrete Semiconductor Products

PHPT61002NYCX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 100 V, 2 A PNP HIGH POWER BIPOLAR TRANSISTOR

Deep-Dive with AI

DocumentsDatasheetPHPT61002NYC Nexperia Product Reliability+7

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT61002NYCX
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Frequency - Transition140 MHz
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-100, SOT-669
Power - Max [Max]1.25 W
Supplier Device PackagePower-SO8, LFPAK56
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic75 mV
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.41
100$ 0.28
500$ 0.22
Digi-Reel® 1$ 0.48
10$ 0.41
100$ 0.28
500$ 0.22
N/A 1958$ 0.96
Tape & Reel (TR) 1500$ 0.14
MouserN/A 1$ 0.59
10$ 0.39
100$ 0.27
500$ 0.24
1500$ 0.20
3000$ 0.14
24000$ 0.14

Description

General part information

PHPT61002 Series

PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.