
Catalog
100 V, 2 A PNP high power bipolar transistor
Description
AI
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

100 V, 2 A PNP high power bipolar transistor
100 V, 2 A PNP high power bipolar transistor
| Part | Frequency - Transition | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Operating Temperature | Package / Case | Mounting Type | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 140 MHz | 75 mV | NPN | 175 °C | SC-100 SOT-669 | Surface Mount | 2 A | LFPAK56 Power-SO8 | 100 V | 100 nA | 100 | 1.25 W |
Nexperia USA Inc. | 125 MHz | 110 mV | PNP | 175 °C | SC-100 SOT-669 | Surface Mount | 2 A | LFPAK56 Power-SO8 | 100 V | 100 nA | 100 | 1.25 W |
Nexperia USA Inc. | 140 MHz | 300 mV | NPN | 175 °C | SC-100 SOT-669 | Surface Mount | 2 A | LFPAK56 Power-SO8 | 100 V | 50 µA | 120 | 25 W |