Discrete Semiconductor Products
STP28N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE
Discrete Semiconductor Products
STP28N65M2
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.15 OHM TYP., 20 A MDMESH M2 POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP28N65M2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 35 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1440 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 170 W |
| Rds On (Max) @ Id, Vgs | 180 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.50 | |
| 10 | $ 2.59 | |||
| 50 | $ 1.91 | |||
| 100 | $ 1.81 | |||
| 500 | $ 1.48 | |||
| 1000 | $ 1.38 | |||
| 2000 | $ 1.32 | |||
Description
General part information
STP28NM50N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources
