Zenode.ai Logo
Beta
SOT223-3L
Discrete Semiconductor Products

NDT451AN

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 7.2 A, 0.03 OHM, SOT-223, SURFACE MOUNT

Deep-Dive with AI

Search across all available documentation for this part.

SOT223-3L
Discrete Semiconductor Products

NDT451AN

Active
ON Semiconductor

POWER MOSFET, N CHANNEL, 30 V, 7.2 A, 0.03 OHM, SOT-223, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

SpecificationNDT451AN
Current - Continuous Drain (Id) @ 25°C7.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC
Input Capacitance (Ciss) (Max) @ Vds720 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max) [Max]3 W
Rds On (Max) @ Id, Vgs35 mOhm
Supplier Device PackageSOT-223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.67
10$ 1.06
100$ 0.71
500$ 0.56
1000$ 0.51
2000$ 0.47
Digi-Reel® 1$ 1.67
10$ 1.06
100$ 0.71
500$ 0.56
1000$ 0.51
2000$ 0.47
Tape & Reel (TR) 4000$ 0.44
8000$ 0.42
NewarkEach (Supplied on Full Reel) 3000$ 0.56
6000$ 0.51
12000$ 0.46
18000$ 0.44
30000$ 0.43
ON SemiconductorN/A 1$ 0.44

Description

General part information

NDT451AN Series

Power SOT N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.