Discrete Semiconductor Products

SIR622DP-T1-RE3

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MOSFET N-CH 150V 12.6A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 150V 12.6A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIR622DP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	12.6 A, 51.6 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	1516 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	17.7 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology
Vishay General Semiconductor - Diodes Division SIR622DP-T1-RE3	4.5 V	1516 pF	6.25 W 104 W	12.6 A 51.6 A	20 V	PowerPAK® SO-8	-55 °C	150 °C	Surface Mount	10 V	7.5 V	17.7 mOhm	150 V	N-Channel	PowerPAK® SO-8	41 nC	MOSFET (Metal Oxide)

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General part information

N-Channel 150 V 12.6A (Ta), 51.6A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available