SIR622 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 150V 12.6A PPAK
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 4.5 V | 1516 pF | 6.25 W 104 W | 12.6 A 51.6 A | 20 V | PowerPAK® SO-8 | -55 °C | 150 °C | Surface Mount | 10 V | 7.5 V | 17.7 mOhm | 150 V | N-Channel | PowerPAK® SO-8 | 41 nC | MOSFET (Metal Oxide) |